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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package High voltage ;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW11 BUW11A Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER BUW11 Open emitter BUW11A VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage IN Emitter-base voltage Collector current ANG CH BUW11 BUW11A SEM E Open base DUC ICON CONDITIONS VALUE 850 TOR 1000 400 450 9 5 10 2 4 UNIT V V V A A A A W ae ae Open collector Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 100 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX 1.25 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUW11 VCEO(SUS) Collector-emitter sustaining voltage BUW11A BUW11 VCEsat Collector-emitter saturation voltage BUW11A BUW11 VBEsat Base-emitter saturation voltage BUW11A ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current IC=2.5A; IB=0.5A VCE=Rated VCES; VBE=0 Tj=125ae VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V IC=2.5A; IB=0.5A IC=3A; IB=0.6A IC=3A; IB=0.6A IC=0.1A ; IB=0; L=25mH CONDITIONS BUW11 BUW11A SYMBOL MIN 400 TYP. MAX UNIT V 450 1.5 V 1.4 V 1.0 2.0 mA mA DC current gain DC current gain Switching times resistive load ton ts tf Turn-on time Storage time HAN INC SEM GE OND IC 10 10 TOR UC 35 35 1.0 |I |I |I 10 s s s For BUW11F IC=3A ;IB1=-IB2=-0.6A 4.0 For BUW11AF IC=2.5A ;IB1=-IB2=-0.5A 0.8 Fall time 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW11 BUW11A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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